Programme and links to content for the meeting held 6-7th January 2014 in Nottingham
Tuesday 6th Jan.
10.15-10.40 Arrival/Registration
10.40-10.45 Introductory remarks: Tom Foxon, Ted Thrush
10.45-11.00
Semi-polar (11-22) GaN grown on patterned Si substrates
Yu*, J. Bai, Y. Hou, Q. Zeng, Y. Gong, and T. Wang
Department of Electronic and Electrical Engineering, University of Sheffield
11.00-11.15
High efficiency yellow emission from InGaN/GaN quantum well structures grown on overgrown semi-polar (11-22) GaN on micro-rod templates
Yipin Gong*, Kun Xing, Benbo Xu, Xiang Yu, Qingping Zeng, Richard Smith, Jie Bai and Tao Wang
Department of Electronic and Electrical Engineering, University of Sheffield
11.15-11.30
Investigation of crystal defects in semipolar and nonpolar GaN
Martin Frentrup*, Yisong Han, Tongtong Zhu, Markus Pristovsek, Rachel Oliver, Sir Colin Humphreys
Department of Materials Science & Metallurgy, University of Cambridge
11.30-11.45
Compositional analysis of non-polar InGaN/GaN quantum well structures
J.T. Griffiths* [1], F. Oehler [1], F.Tang [1], S. Zhang [1], W. Y. Fu [1], T. Zhu [1], F. Massabuau [1], S.D. Findlay [2], C.L. Zheng [3], M. Weyland [3], J. Etheridge [3], T. L. Martin [4], P. A. J. Bagot [4], M. P. Moody [4], D. Sutherland [5], D. Kundys [5],P. Dawson [5], M.J. Kappers [1], C.J. Humphreys [1], R.A. Oliver [1]
[1] Department of Materials Science and Metallurgy, University of Cambridge
[2] School of Physics, Monash University, Victoria, 3800, Australia
[3] Monash Centre for Electron Microscopy, Monash University, Victoria 3800, Australia
[4] Department of Materials, University of Oxford
[5] School of Physics and Astronomy, Photon Science Institute, University of Manchester
11.45-12.00
Investigation of the Optical Polarisation Properties of Non-Polar InGaN/GaN Multi-Quantum Wells
Danny Sutherland* [1], James T. Griffiths [2], Tongtong Zhu [2], Phil Dawson [1], Fabrice Oehler [2], Menno J. Kappers [2], Colin J. Humphreys [2], Rachel A. Oliver [2]
[1] School of Physics and Astronomy, Photon Science Institute, University of Manchester
[2] Department of Materials Science and Metallurgy, University of Cambridge
12.00-12.15
Spatial and time resolved photoluminescence from InGaN/GaN multiple quantum well structures with high indium on overgrown (11-22) semi-polar GaN
Xu*, R. Smith, Y. Zhang Y. Gong, K. Xing, J. Bai, T. Wang
Department of Electronic and Electrical Engineering, University of Sheffield
12.15-12.30
Stokes Shift in (11-22) Semi-polar InGaN/GaN Multiple Quantum Wells on Overgrown Semi-polar GaN
Yun Zhang, Rick Smith*, Benbo Xu, Yaonan Hou, Yipin Gong, and Tao Wang
Department of Electronic and Electrical Engineering, University of Sheffield
12.30-14.00: Lunch
14.00-14.45 (extended by request)
Optical studies of single non-polar a-plane InGaN quantum dots as possible single photon sources
Benjamin P.L. Reid [1], Tongtong Zhu [2], Claudius Kocher [1,3], Fabrice Oehler [2], Robert Emery [2], Rachel A. Oliver [2] and Robert A. Taylor* [1].
[1] Department of Physics, University of Oxford
[2] Department of Materials Science and Metallurgy, University of Cambridge
[3] Department of Physics, Konstanz University, Germany
14.45-15.00
Selective-area growth of Ga-polar GaN Nanowires by MOVPE
P. M. Coulon*, [1], B. Alloing, [2], V. Brändli, [2], S. Chenot [2], M. Teisseire [2], P. Vennéguès [2], J. Zuniga-Pérez [2]
[1]Department of Electrical & Electronic Engineering, University of Bath
[2] CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne, FRANCE
15.00-15.15
Understanding the effect of nanowire geometry on the active regions of core-shell emitters
I. Girgel* [1], C. Bryce [2], P.R. Edwards[2], E. Le Boulbar [1], D.W.E. Allsopp [1], R.W. Martin [2], P.A. Shields [1]
[1] Department of Electronic and Electrical Engineering, University of Bath
[2] Department of Physics, SUPA, University of Strathclyde, Glasgow
15.15-15.30
The PowerGaN Consortium – Current Status and Future Plans
Iain Thayne* [3], Markus Cäsar [1], Paul Chalker [4], Sung-Jin Cho [3], Paul Evans [7], Konstantinos Floros [3], Andrew Forsyth [5], Tom Foxon [6], Ivor Guiney [2], Shahrzad Hosseini Vajargah [2], Peter Houston [8], Colin Humphreys [2], S. Jiang [8], Mark Johnson [7], Serge Karboyan [1],Martin Kuball [1], Kean Boon Lee [8], Xu Li [3], Sergei Novikov [6], Douglas Paul [3], Hongtu Qian [8], Joe Roberts [4], Gary Ternent [3], Michael Uren [1], David Wallis [2], Will Waller [1], Edward Wasige [3], Zaffar Zaidi [8]
[1] Centre for Device Thermography and Reliability, University of Bristol
[2] The Cambridge Centre for GaN, University of Cambridge
[3] James Watt Nanofabrication Centre, University of Glasgow
[4] Centre for Materials and Structures, University of Liverpool
[5] Power Conversion Group, University of Manchester
[6] School of Physics and Astronomy, University of Nottingham
[7] Power Electronics, Machines & Control Group, University of Nottingham
[8] III-V National Centre, University of Sheffield
15.30-16.00 Tea
16.00-16.15
Optimising Surface Morphology of Thick GaN Buffer Layers for High-Electron Mobility Transistors Grown on Si (111) with Metal-Organic Vapour Phase Epitaxy
Quanzhong Jiang*[1] , Duncan W. Allsopp[1], Wang N. Wang [1], David Cherns [2] and Martin Kuball [2]
[1] Department of Electronic and Electrical Engineering, University of Bath
[2]HH Wills Physics Laboratory, University of Bristol
16.15-16.30
Back biasing AlGaN/GaN HFETs to characterise epitaxial layer structures
Alexander Pooth* [1,2], Trevor Martin [2], Markus Caesar [1], Michael J. Uren [1], Martin Kuball [1]
[1] Centre for Thermography and Reliability, University of Bristol
[2] IQE (Europe), St Mellons, Cardiff
16.30-16.45
ECCI investigation of AlGaN/GaN HEMT structures grown on Si
Thomson* [1], G. Naresh-Kumar [1], B. Hourahine [1], C. Trager-Cowan [1], P. Wright [2], T. Martin [2]
[1] SUPA Department of Physics, University of Strathclyde, Glasgow
[2] IQE, St. Mellons, Cardiff
16.45-17.00
Influence of field plate geometry and buffer doping on dynamic on-resistance in AlGaN/GaN heterostructure field effect transistors
S. Jiang* [1], K. B. Lee [1], I. Guiney [2], Z. H. Zaidi [1], H. Qian [1], D. J. Wallis [2], M. J. Uren [3], M. Kuball [3], C. J. Humphreys [2] and P. A. Houston [1]
[1] Department of Electronic and Electrical Engineering, University of Sheffield
[2] Department of Materials Science and Metallurgy, University of Cambridge
[3] H.H. Wills Physics Laboratory, University of Bristol
17.00-17.15
Enhancement-mode GaN/AlInN/GaN MISHFETs with a Threshold Voltage of +3.0 V and Blocking Voltage above 1000 V
K. B. Lee* [1], I. Guiney [2], S. Jiang [1], Z. H. Zaidi [1], H. Qian [1], D. J. Wallis [2], M. J. Uren [3], M. Kuball [3], C. J. Humphreys [2] and P. A. Houston [1]
[1] Department of Electronic and Electrical Engineering, University of Sheffield
[2] Department of Materials Science and Metallurgy, University of Cambridge
[3] H.H. Wills Physics Laboratory, University of Bristol
17.15-17.30
Direct comparison of thermal stability, radiation hardness and breakdown characteristics of InAlN and AlGaN HEMTs, with and without SiN passivation
Matthew Smith* [1,2], Donagh O’Mahony [3], Fabio Vitobello [4], Andrew Barnes [4], Peter J. Parbrook [1,2]
[1] Nitride Materials Group, Tyndall National Institute, University College Cork, Ireland
[2] School of Engineering, University College Cork, Ireland
[3] III-V Materials and Devices Group, Tyndall National Institute, University College Cork, Ireland
[4] Components Technology and Space Materials Division, European Space Technology Research Centre (ESTEC), European Space Agency, Noordwijk, Netherlands
17.30-18.30 AGM
19.30 Dinner
Wednesday 7th Jan.
7.00-8.45 Breakfast
9.00-9.15
Understanding the surface hillocks on GaN templates grown on Si (111)
Yisong Han*, Dandan Zhu, David Wallis, Tongtong Zhu and Colin Humphreys
Department of Materials Science and Metallurgy, University of Cambridge
9.15-9.30
Quantitative Domain Orientation Analysis of GaN /Er2O3 Grown on Vicinal Si (001)
Lars Grieger*, Patricia Kidd, Joachim F. Woitok
PANalytical B.V., Lelyweg 1, 7600 AA Almelo, The Netherlands
9.30-10.15 (Invited)
Multi-technique nanoscale structural analysis of III-nitrides
Bougerol* [1], M. Beeler [2], C. Durand [2], J. Eymery [2], Lopez-Haro [2], E. Monroy [2], E. Robin [2], B. Bonef [2], P.H. Jouneau [2]
[1] Institut Néel, CNRS and Université Grenoble Alpes, F-38042 Grenoble France
[2] INAC, CEA and Université Grenoble Alpes, F-38054 Grenoble France
10.15-10.30
A defect cascade in the photochromic switching of europium centres in GaN(Mg)
K.P. O’Donnell*[1], P.R. Edwards [1], M. Yamaga [2], K. Lorenz [3], M.J. Kappers [4] and M. Boćkowski [5]
[1] SUPA Department of Physics, University of Strathclyde, Glasgow
[2]Department of Mathematical and Design Engineering, Gifu University, Japan
[3] Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 102695-066 Bobadela LRS Portugal
[4] Department of Materials Science and Metallurgy, University of Cambridge
[5] Institute of High Pressure Physics, Warsaw, Poland
10.30-11.00 Coffee
11.00-11.15
Effect of quantum well growth temperature on optical properties of blue and green InGaN/GaN structures
M.J. Kappers* [1], S. Hammersley [2], F.C.-P. Massabuau, S.-L. Sahonta [1], P. Dawson [2], R.A. Oliver [1], C. J. Humphries [1]
[1] Department of Materials Science and Metallurgy, University of Cambridge
[2] School of Physics and Astronomy, Photon Science Institute, University of Manchester
11.15-11. 30
Optical Investigation of InGaN/GaN LEDs Containing Prelayers
Matthew J. Davies* [1], Simon Hammersley [1], Philip Dawson [1], Menno J. Kappers [2], Rachel A. Oliver [2], Colin J. Humphreys [2]
[1] School of Physics and Astronomy, Photon Science Institute, University of Manchester
[2] Department of Materials Science and Metallurgy, University of Cambridge
11.30-11.45
Effect of underlayers on optical and electronic properties of blue-emitting InGaN/GaN LEDs
M. J. Wallace [1], J. Bruckbauer*[1], P.R. Edwards [1], M. J. Kappers [2], M. A. Hopkins [3], D. W. E. Allsopp[3], R. A. Oliver [2], C. J. Humpreys [2] and R. W. Martin [1]
[1] Department of Physics, SUPA, University of Strathclyde, Glasgow,
[2] Department of Materials Science and Metallurgy, University of Cambridge
[3] Department of Electronic and Electrical Engineering, University of Bath
11.45-13.00 Posters
13.00-14.15 Lunch
14.15-14.45 Walk to Physics
14.45-15.00
Carrier Re-distribution in InGaN/GaN Light Emitting Diodes
Simon Hammersley* [1], Matthew J. Davies [1], Philip Dawson [1], Rachel A. Oliver [2], Menno Kappers [2], Colin J Humphreys [2]
[1] School of Physics and Astronomy, Photon Science Institute, University of Manchester
[2] Department of Materials Science and Metallurgy, University of Cambridge
15.00-15.15
Investigation of hybrid white inorganic/organic LEDs using a novel organic compound for colour conversion
J. Bruckbauer* [1], N. J. Findlay [2], C. Brasser [1], S. Arumugam [2], A. R. Inigo [2], D. J. Wallis [3], P. J. Skabara [2] and R. W. Martin [1]
[1] Department of Physics, SUPA, University of Strathclyde, Glasgow
[2] Department of Pure and Applied Chemistry, WestCHEM, University of Strathclyde, Glasgow
[3] Plessey Semiconductors Ltd, Plymouth
15.15-15.30
Transfer printing of ultra-thin GaN-based micro-LEDs via capillary bonding
B. Guilhabert [1], A.J. Trindade [1], E.Y. Xie [1], R. Ferreira [1], J.J.D. McKendry [1], D. Zhu [2,3], N. Laurand [1], E. Gu [1], I.M. Watson [1], C.J. Humphreys [2], D.J. Wallis [2,3] and M.D. Dawson* [1]
[1] Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow
[2] Department of Materials Science and Metallurgy, University of Cambridge
[3] Plessey Semiconductors Ltd, Plymouth
15.30-16.00 Tea
16.00-16.15
8 Gb/s Bi-directional Data Transmission over 10 m Polymer Optical Fibre Using Micro-Light-Emitting Diodes
J.J.D. McKendry* [1], X. Li [2], N. Bamiedakis [2], E. Xie [1], R. Ferreira [1], E. Gu [1], R.V. Penty [2], I.H. White [2] and M.D. Dawson [1]
[1] Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow
[2] Centre for Photonic Systems Department of Engineering, University of Cambridge
16.15-16.30
250nm Fibre-Coupled Ultraviolet Light Emitting Diodes for Space Application
Mahbub Akhter, Vitaly Z Zubialevich, Cormac Eason, Pleun P Maaskant, Zhiheng Quan, Brian Corbett and Peter J Parbrook*
Tyndall National Institute, University College Cork, Ireland
16.30-16.45
GaN-on-Si micro-LED probes for site-specific optogenetic activation of cortical neurons
R.P. Scharf* [1], S. Sakata [2], D. Zhu [3,4], E. Gu [1], I.M. Watson [1], D.J. Wallis [3,4], C.J. Humphreys [3], M.D. Dawson [1], K. Mathieson [1]
[1] Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow
[2] Strathclyde Institute of Pharmacy and Biomedical Sciences, University of Strathclyde, Glasgow
[3] Department of Materials Science and Metallurgy, University of Cambridge
[4] Plessey Semiconductors Ltd, Plymouth
16.45-17. 00
Determination of band gap and bowing parameter of Al rich InAlN
Shahab N. Alam* [1,2], Vitally Zubialevich [2], Duc. Van Dinh [2], Peter Parbrook [1,2]
[1] Nitride Materials Group, Photonics centre, Tyndall National Institute, Cork, Ireland
[2] School of Engineering, University College Cork, Ireland
17.00-17.05 Concluding remarks
Acknowledgements
The UKNC conference organisers gratefully acknowledge the sponsorship of the Institute of Physics (IOP).
Posters
1. Growth and Characterisation of cubic GaN on 3C-SiC on Si
M.J. Kappers* [1], M. Fentrup [1], S-L Sahonta [1], I. Guiney [1], D. J. Wallis [1], P. Ward [2], J. Shaw [2], C.J. Humphreys [1]
[1] Department of Materials Science and Metallurgy, University of Cambridge
[2] Anvil Semiconductors Ltd.
2. Hydrogen etching of InGaN/GaN quantum wells and epilayers
Bao*, M.J. Kappers, S-L. Sahonta, R. A. Oliver
Department of Materials Science and Metallurgy, University of Cambridge
3. Structures of non-polar (11-20) InGaN quantum dots grown by modified droplet epitaxy
H. P. Springbett*, J. T. Griffiths, T. Zhu, R. A. Oliver
Department of Materials Science and Metallurgy, University of Cambridge
4. Optical and electrical characterisation of green – orange InGaN/GaN LEDs grown by MOVPE
K. Cavanagh* [1], C. Liu [2], T. Martin [3], S. Sivaraya [1], M. A. Hopkins [1], D. W. E. Allsopp [1]
[1] Department of Electronic and Electrical Engineering, University of Bath
[2] IQE-NanoGaN, Department of Electrical and Electronic Engineering, University of Bath
[3] IQE, St Mellons, Cardiff
5. GaN LEDs characterization using fluorescence microscopy
Silvino Presa* [1], Pleun Maaskant [1], Menno Kappers [2], Colin Humphreys [2], Brian Corbett [1]
[1]Tyndall National Institute, University College Cork, Ireland
[2]Department Materials Science and Metallurgy, University of Cambridge
6. Multi-Microscopy Techniques for the Investigation of Fully Coalesced Boundaries in GaN
T. J. O’Hanlon*, R.A. Oliver
Department of Materials Science and Metallurgy, University of Cambridge
7. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors
G. Naresh-Kumar* [1], A. Vilalta-Clemente [2], S. Pandey [3], D. Skuridina [4], H. Behmenburg [5], P. Gamarra [6], G. Patriarche [7], I. Vickridge [8], M. A. di Forte-Poisson [6], P. Vogt [4], M. Kneissl [4], M. Morales [2], P. Ruterana [2], A. Cavallini [3], D. Cavalcoli [3], C. Giesen [5], M. Heuken [5] and C. Trager-Cowan [1]
[1] Department of Physics, SUPA, University of Strathclyde, Glasgow
[2] CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex, France
[3] Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna, Italy
[4] Institute of Solid State Physics, Technical University Berlin, Germany
[5] AIXTRON SE, Herzogenrath, Germany
[6] Thales Research and Technology, Marcoussis, France
[7] LPN, Marcoussis, France
[8] Institut des NanoSciences, Université Pierre et Marie Curie, Paris, France
8. Analysis of step-AlGaN and co-doped graded AlGaN HEMT structures
F.S. Choi* [1], I. Guiney [1], D.J. Wallis [1], K.B. Lee [2], Z. Zaidi [2], P. Houston [2], R.A. Oliver [1], C.J. Humphreys [1]
[1] Department of Materials Science and Metallurgy, University of Cambridge
[2] Department of Electronic and Electrical Engineering, University of Sheffield
9. Analysis of the Defect Structure of Highly Conductive Al0.81 Ga0.19N:Si Layers Grown on Laterally Overgrown AlN/sapphire
Nouf-Allehiani* [1], G. Kusch [1], F. Mehnke [2], G. Naresh-Kumar [1], T. Wernicke [2], S. Kraeusel [1], B. Hourahine [1], P.R. Edwards [1], C. Kuhn [2], A. Knauer [3], V. Kueller [3], Mogilantenko [3], M. Weyers [3], R. W. Martin [1] M. Kneissl [2],[3] and C.Trager-Cowan[1]
[1] Department of Physics, SUPA, University of Strathclyde, Glasgow
[2] Institute of Solid State Physics, Technische Universität Berlin, Germany
[3] Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
10. Optical and structural characterization of InGaN/GaN core-shell grown on ICP etched GaN/AlN/Si nanorod array
E.D. Le Boulbar* [1,2], S. Lis [1], P.-M. Coulon [1], P.R. Edwards [3], C. Lewins [1], I. Girgel [1], R.W. Martin [3], D.W.E Allsopp [1], D. Cherns [4], C.R. Bowen [2] and P.A. Shields [1]
[1] Department of Electronic and Electrical Engineering, University of Bath
[2] Department of Mechanical Engineering, University of Bath
[3] Department of Physics, SUPA, University of Strathclyde, Glasgow
[4] School of Physics, University of Bristol
11. Cathodoluminescence Lifetime Mapping of InGaN/GaN Nanowires
Jean Berney [1], David Gachet [1], Samule Sonderegger*[1], Gwénolé Jacopin [2], Mehran Shahmohammadi [2], Ding-Shyue (Jerry) Yang [3]
[1] Attolight AG, EPFL Innovation Park, Building D, 1015 Lausanne, Switzerland
[2] EPFL, Laboratory of Quantum Optoelectronics, 1015 Lausanne, Switzerland
[3] University of Houston, Texas, USA
12. Investigation of collimation of light emission of vertical GaN based nanorod array light-emitting diodes using finite-difference time-domain method
Sophia Fox*, Szymon Lis, Simon E.J. O’Kane, Jay Sarma, Duncan W.E. Allsopp
Department of Electronic and Electrical Engineering, University of Bath
