Programme and links to content for the meeting held 7-8th January 2014 in Bristol

Tuesday 7th Jan.

10.15-10.40 Arrival/Registration
10.40-10.45 Introductory remarks: Tom Foxon, David Cherns, Ted Thrush

10.45-11.00
Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction
V. Kachkanov¹, B. Leung², J. Song², Y. Zhang², M.-C. Tsai², G. Yuan² and J. Han^2
1Diamond Light Source Ltd, Diamond House, Chilton, Didcot, Oxfordshire OX11 0DE, UK
²Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA

11.00-11.15
Chemical decomposition in Indium Gallium Nitride Nanorods
R.F. Webster¹, D. Cherns¹, S.V. Novikov², C.T. Foxon², A. M. Fischer³, F. A. Ponce³ and S.J. Haigh^4,5
1School of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK
²Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
³Department of Physics, Arizona State University, Tempe, AZ, USA
⁴Materials Science Centre, University of Manchester, Manchester M13 9PL, UK
⁵SuperSTEM Laboratory, Keckwick Lane, Daresbury, WA4 4AD, UK

11.15-11.30
Mixed dislocations in GaN and InGaN: core structures and alloy segregation
M.K. Horton¹, S.K. Rhode², M.A. Moram^1,2
1Dept. Materials, Imperial College London, Exhibition Road, London SW7 2AZ, UK
²Dept. Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK

11.30-11.45
A Study of the Inclusion of Prelayers in InGaN/GaN Single and Multiple Quantum Well Structures
M. J. Davies¹, P. Dawson¹, F. C.-P. Massabuau², R. A. Oliver², M. J. Kappers² and C. J. Humphreys^2
1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK
²Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK

11.45-12.00
Investigation into the effect of growth methodology on the localisation environment of carriers in InGaN/GaN quantum wells using resonant photoluminescence excitation spectroscopy
W.E. Blenkhorn¹, P. Dawson¹, F.C-P. Massabuau², M.J. Kappers², C.J. Humphreys² and R.A. Oliver^2
1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK
²Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK

12.00-12.15
The nature of optical emission from non-polar m-plane InGaN/GaN MQWs grown on bulk GaN
D. Sutherland¹, D. Kundys¹, T.Zhu², J.T. Griffiths², P. Dawson¹, F. Oehler², M.J. Kappers², C.J. Humphreys², R.A. Oliver^2
1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK
²Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK

12.15-12.30
A study of the optical polarisation from InGaN/GaN MQWs grown on m- and a-plane free-standing bulk substrates
D. Kundys¹,D. Sutherland¹, T.Zhu², J.Griffiths², P. Dawson¹, F. Oehler²,M.J. Kappers², C.J. Humphreys² and R.A. Oliver^2
1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK
²Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK

12.30-13.45: Lunch

13.45-14.30
GaN on Si for Power Electronics (invited)
Marianne Germain
EpiGaN, Hasselt, Belgium

14.30-14.45
Mapping of the strain and distribution of dislocations in InAlN based HEMTs using electron backscatter diffraction
A. Vilalta-Clemente¹, G. Naresh-Kumar², C. Trager-Cowan², P. Gamarra³, M. A. di Forte-Poisson³ and A. J. Wilkinson^1
1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
² Department of Physics, SUPA, University of Strathclyde, Glasgow G4 ONG, UK
³ Thales Research and Technology, III-V Lab, Route de Nozay, 91460 Marcoussis, France

14.45-15.00
Liquid Crystal Electrography: Electric Field Mapping and Detection of Peak Electric Field Strength in AlGaN/GaN High Electron Mobility Transistors
Janina Möreke, Chris Hodges, Laura L.E. Mears, Michael J.Uren, Robert M. Richardson and Martin Kuball
H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL, UK

15.00-15.15
Investigation of buffer layers by substrate biasing
Markus Caesar¹, Michael J. Uren¹, Mark Gajda², Andrew Rimmington² and Martin Kuball^1
1H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL, UK
²NXP semiconductors, Stockport SK7 5BJ, Manchester, UK

15.15-15.30
Thermal Resistance of State-of-the-art GaN-on-Diamond Transistors
J.W. Pomeroy and M. Kuball
H.H. Wills Physics Laboratory, University of Bristol,Tyndall Avenue, Bristol BS8 1TL, U.K.

15.30-16.00: Tea

16.00-16.15
InAlN: An alternative quantum well material for UV emitters?
V. Z. Zubialevich¹, T. C. Sadler¹, D. V. Dinh¹, H. N. Li^1,2, S. N. Alam^1,2, P. Pampili^1,2, G. Kusch³, R.W. Martin³ and P. J. Parbrook^1,2
1 Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland
² Department of Electrical and Electronic Engineering, University College Cork, Cork, Ireland
³ Department of Physics, University of Strathclyde, Glasgow, Scotland, G4 ONG, UK

16.15-16.30
Room temperature plasmonic lasing from a single nanorod with a low threshold
Y Hou, P Renwick, B Liu, J Bai, and T Wang
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

16.30-16.45
Blue lasing of an InGaN/GaN MQWs microdisk on Si with a recorded low threshold
M. Athanasiou, B. Liu, R. Smith and T. Wang
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

16.45-17.30
Nitride Semiconductor Lasers from UV-A to –C (invited)
Noble Johnson
Palo Alto Research Center Inc., Palo Alto, CA 94304, USA

17.30-17.45
Opportunities for Nitrides research through the EPSRC National Centre for III-Technologies
Jon Heffernan
EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD

17.45-18.30: AGM

19.30: Dinner

Wednesday 8th Jan

6.30-8.45: Breakfast

9.00-9.15
MBE of group III nitrides at Nottingham, from GaN bulk growth to the epitaxy of boron nitride layers.
S. V. Novikov, A. J. Kent, L. Eaves and C.T. Foxon
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK

9.15-9.30
Composition and luminescence studies of MOCVD grown AlInN layers with and without Ga auto-incorporation
E. Taylor¹, M. D. Smith^2,3, T. C. Sadler², K. Lorenz⁴, H. N. Li^2,3, V. Z. Zubialevich^2,3, V. D. Dinh^2,3, E. Alves⁴, P. J. Parbrook^2,3, R. W. Martin^1
1 Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 ONG, UK
² Nitride Materials Group, Tyndall National Institute, University College Cork, Ireland
³ Electrical and Electronic Engineering department, University College Cork, Ireland
⁴ IPFN, Campus Tecnológico e Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Portugal

9.30-9.45
Composition and Optical properties of Dilute-Sb GaN_1-xSb_x Highly Mismatched alloys grown by MBE
M. Shaw¹, R.E.L. Powell², R. W. Martin¹, A. J. Kent², K. M. Yu³, W. L. Sarney⁴, Z. Liliental-Weber³, M. Ting^3,5,S. P. Svensson⁴, W. Walukiewicz³, C. T. Foxon² and S. V. Novikov^2
1Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK
²School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
³Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
⁴US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA
⁵Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA

9.45-10.30
Narrow-Gap Nitride Semiconductors:  Trying to Live Without InN (invited)
Steven M. Durbin
Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, MI 49008, USA
& Department of Physics, University at Buffalo, Buffalo, NY 14260, USA

10.30-11.00: Coffee

11.00-11.15
Investigation of Parasitic Light Emission in InGaN/GaN Blue Light Emitting Diodes
K. Cavanagh¹, M.A. Hopkins¹, M.J. Kappers², M. J.  Wallace³, P. R. Edwards³, W.A. Philips², E.J. Thrush², S.A. Fox¹, R.A. Oliver², R.W. Martin³, D.W.E. Allsopp¹ and C.J. Humphreys^2
1Department of Electronic and Electrical Engineering,  University  of  Bath, Bath, BA2 7AY, UK
²Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 3QZ, UK
³Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK

11.15-11.30
Spatial resolution of planar-patterned GaN micro/nano LEDs
J. Herrnsdorf, E. Xie, and M. D. Dawson
Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, UK

11.30-11.45
Why 280 nm is the optimum emission wavelength for water treatment with UV-LEDs
U.E. Gabbai¹, R. Simons², M. Welch³, M.A. Moram^1,2
1Dept. Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK
²Dept. Materials, Imperial College London, Exhibition Road, London SW7 2AZ, UK
³Dept. Biochemistry, University of Cambridge, Downing Site, Cambridge CB2 1QW, UK

11.45-12.00
3Gb/s single-LED OFDM link using a gallium nitride micro-LED
J. J. D. McKendry¹, D. Tsonev², H. Chun³, S. Rajbhandari³, S. Videv², E. Gu¹, M. Haji⁴, S. Watson⁴, A. E. Kelly⁴, G. Faulkner³, M. D. Dawson¹, H. Haas¹, and D. O’Brien^3
1Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow, G4 0NW, UK
²Institute for Digital Communications, Joint Research Institute for Signal and Image Processing, The University of Edinburgh, Edinburgh, UK
³Department of Engineering Science, University of Oxford, Oxford, UK
⁴School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK

12.00-12.15
IQE and all that jazz: the temperature dependence of semiconductor light emission
K.P. O’Donnell
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, UK

12.15-13.30: Lunch

13.30-14.45: Posters

14.45-15.00
Stress Engineering in Fabrication of InGaN/GaN Vertical Light Emitting Diodes for Reduction of Quantum-confined Stark Effect
Paulo Ki, Quanzhong Jiang, Duncan W.E. Allsopp and W.N. Wang
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, UK

15.00-15.15
Growth and characterisation of a non-polar distributed Bragg reflector
J.T. Griffiths¹, T. Zhu¹, B.P.L. Reid, R.A². Taylor², A.J. Howkins², I.W. Boyd³, M.J. Kappers¹, and R.A. Oliver^1
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
²Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK
³Experimental Techniques Centre, Brunel University, Uxbridge, UB8 3PH, UK

15.15-15.30
Engineering the Directivity of Light Emission from High Brightness LEDs
Szymon Lis and Duncan Allsopp
University of Bath, Bath BA2 7AY, UK

15.30-16.00:  Tea

16.00-16.15
The impact of growth parameters on trench defects in InGaN/GaN quantum wells
F.C-P. Massabuau, A. Le Fol, S.K. Pamenter, F. Oehler, M.J. Kappers, C.J. Humphreys and R.A. Oliver.
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK

16.15-16.30
Fe Induced Changes in the Initial Growth of GaN on Sapphire and Si by MOCVD
Ivor Guiney, Rachel Oliver and Colin Humphreys
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK

16.30-16.45
Fabrication of Nanoporous GaN for solar-power hydrogen generation
J. Benton, J. Bai and T. Wang
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

16.45-16. 50: Concluding remarks

Posters

Electronic structure and local bonding of Sc in epitaxial ScGaN
S.M. Knoll¹, M. Rovezzi², S. Zhang¹, T.B. Joyce³ and M.A. Moram^1,4
1 Dept. Materials Science & Metallurgy, University of Cambridge, Pembroke St., Cambridge, CB2 3QZ, UK
² European Synchrotron Radiation Facility, BP220, 38043 Grenoble, France
³ Department of Materials Science and Engineering, University of Liverpool, Ashton St, Liverpool, L69 3GH, UK
⁴ Dept. Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK

Improving depth resolution of Raman thermography on GaN HEMTs: Temperature in GaN channel and temperature gradients in the GaN buffer layer
C. Hodges, J. Anaya Calvo and M. Kuball,
Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN LED
M. J. Wallace¹, P. R. Edwards¹, M. J. Kappers², M. A. Hopkins³, F. Oehler², S. Sivaraya³, D. W. E. Allsopp³, R.A. Oliver², C. J. Humphreys² and R. W. Martin^1
1Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK
²Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 3QZ, UK
³Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK

Atom probe tomography examination of the In distributions in a-plane In_xGa_1-xN/GaN quantum wells grown by metal organic vapour phase epitaxy
Fengzai Tang¹, Tongtong Zhu¹, Fabrice Oehler¹, Menno Kappers¹, Rachel Oliver^1, Michael Moody², Tomas Martin², Paul Bagot² and George Smith^2
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
²Departments of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

Hyperspectral cathodoluminescence imaging of InAlN quantum well structures and AlGaN layers
Gunnar Kusch¹; Haoning Li²; Paul R. Edwards¹; Vitaly Z. Zubialevich²; Peter J.Parbrook² and Robert W. Martin^1
1Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow East, Glasgow G4 0NG, UK
²Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland

Study of the strain of (11-22) semi-polar GaN overgrown on nanorod templates
B. Xu, X. Yu, Y. Gong, K. Xing, J. Bai and T. Wang
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

Photonic Crystal Effects in Regular Arrays of Core Shell and Quantum Disc InGaN/GaN Nanorods
C.J. Lewins¹, S.M. Lis¹,E.D. Le Boulbar¹, P.R. Edwards², R.W. Martin², P.A. Shields¹ and D.W.E. Allsopp^1
1Dept. Electrical & Electronic Engineering, University of Bath, Bath, BA2 7AY, UK
²Dept. of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK

Quantum Confined Stark Effect reduction by polarization matching of a near- UV LED active region
P. Pampili^{1, 2}, V. Z. Zubialevich¹, M. Caro^1,3, S Schulte¹, E. P. O’Reilly^1,3  and P. J. Parbrook^{1, 2
1}Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland
²School of Engineering, University College Cork, Western Road, Cork, Ireland
³Department of Physics, University College Cork, Western Road, Cork, Ireland

Influence of Au thickness on the structural and electrical properties of Ti/Al/Ni/Au Ohmic contacts for InAlN/GaN HEMTs
Donagh O’Mahony¹, Mathew Smith¹, Pleun Maaskant¹, Brian Corbett¹ Fabio Vitobello³, Andrew Barnes³ and Peter J Parbrook^1,2.
¹Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland
²Department of Electrical and Electronic Engineering, University College Cork, Western Road, Cork, Ireland
³ESA-ESTEC, Noordwidjk, Netherlands 

Parametric Studies of Modal Diffraction Patterns from LED Nanorods
Simon O’Kane, Szymon Lis, J. Sarma and Duncan Allsopp
Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY

Advances in Modelling Droop in InGaN/GaN Quantum Well Recombination
S. J. Wilkinson, T. J. Badcock and P. Dawson
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK